Explicit model for the gate tunneling current in double-gate MOSFETs

Solid-State Electronics

Volumn 68, Issue , 2012, Pages 93-97

  Chaves, Ferney ^a   Jiménez, David ^a   Suñé, Jordi ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Direct tunneling; Double gate MOSFETs; Gate tunneling; Modeling quantization

Indexed keywords

CLOSED-FORM EXPRESSION; DIRECT TUNNELING; DOUBLE-GATE; DOUBLE-GATE MOSFETS; ELECTRICAL CIRCUIT; EXPLICIT MODELS; GATE LEAKAGES; GATE TUNNELING; GATE TUNNELING CURRENTS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NUMERICAL SOLUTION; QUANTUM MODELS;

ELECTRON TUNNELING; LEAKAGE CURRENTS;

MOSFET DEVICES;

EID: 84655170277     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.11.003     Document Type: Article

References (17)

1. E. Nowak Turning silicon on its edge IEEE Circ Dev Mag 2004 20 31
2. G. Darbandy Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-k dielectrics for nanoscale double-gate MOSFETs Semicond Sci Technol 26 2011
3. Garduo SI, Cerdeira A, Estrada M. Electrical engineering, computing science and automatic control. In: CCE, 2009 6th international conference on. 2009. p. 10-13.
4. P.V. Nagaraju, and A. DasGupta Study of gate leakage current in symmetric double gate MOSFETs with high-k/stacked dielectrics Thin Solid Films 504 2006 317 320
5. B. Majkusiak, and J. Walczak Simulation of the tunnel current in the double gate (DG) MOS transistor J Comput Electron 5 2006 143 148
6. S.K. Vishvakarma, V. Kolman Kumar, A.K. Saxena, and S. Dasgupta Modeling and estimation of edge direct tunneling current for nanoscale metal gate (Hf/AlNx) symmetry double gate MOSFET Microelectron J 42 2011 688 692
7. Yong-Tian Hou, Mign-Fu Li, Tony Low, and Dim-Lee Kwong Metal gate work function engineering on ate leakage of MOSFETs IEEE Trans Electron Dev 51 2004 1783 1789
8. F. Chaves, D. Jiménez, and J. Suñé Explicit quantum potential and charge model for double-gate MOSFETs Solid State Electron 54 2010 530 535
9. L. F Register, E. Rosembaum, and K. Yang Analitic model for direct tunneling in polycristalline silicon-gate metal-oxide-semiconductor devices Appl Phys Lett 74 1999 457
10. E. Merzbacher Quantum mechanics 1970 Wiley New York [chapter 7]
11. Z.A. Weinberg On tunneling in metal-oxide-silicon structures J Appl Phys 53 1982 5052
12. P.J. Price Resunanat tunneling via an accumulation layer Phys Rev B, Condens Mat 45 1992 9042
13. E. Cassan On the reduction of direct tunneling leakage through ultrathin gate oxides by a one-dimensional Schrödinger-Poisson solver Appl Phys 87 2000 7931
14. A. Dalla Serra, A. Abramo, P. Palestri, L. Selmi, and F. Widdershoven Closed- and open-boundary models for gate-tunnel calculation in nMOSFETs IEEE Trans Electron Dev 48 2001 1811
15. C. Farrell, and U. Leonhardt The perfectly matched layer in numerical simulations of nonlinear and matter waves J Opt B: Quantum Semiclass Opt 7 2005 1 4 (Pubitemid 40162677)
16. L. Chang Direct-tunneling gate current in double-gate and ultrathin body MOSFETs IEEE Trans Electron Dev 49 2002 2288 2295
17. A. Ortiz-Conde, F. J Garcia Sanchez, and S. Molobabic Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs IEEE Trans Electron Dev 52 2005 1669 1672 (Pubitemid 41194407)