Analysis of reverse tunnelling current in GaInN light-emitting diodes

Electronics Letters

Volumn 46, Issue 2, 2010, Pages 156-158

  Cho, J ^a   Mao, A ^a   Kim, J K ^a   Son, J K ^b   Park, Y ^b   Schubert, E F ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING CONCENTRATION; ELECTRICAL PROPERTY; GAN LAYERS; MULTIPLE QUANTUM WELLS; REVERSE LEAKAGE CURRENT; TUNNELLING CURRENT; TUNNELLING PROBABILITY;

ELECTRIC PROPERTIES; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; SEMICONDUCTOR QUANTUM WELLS; TUNNELING (EXCAVATION); WIND TUNNELS;

LIGHT EMITTING DIODES;

EID: 77949951160     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.3236     Document Type: Article

References (9)

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