Surface-related states in oxidized silicon nanocrystals enhance carrier relaxation and inhibit auger recombination

Nanoscale Research Letters

Volumn 3, Issue 9, 2008, Pages 315-320

  Othonos, Andreas ^a   Lioudakis, Emmanouil ^a   Nassiopoulou, A G ^b  

^a UNIVERSITY OF CYPRUS   (Cyprus)

^b INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

Auger recombination; Carrier dynamics; Silicon nanocrystals; Surface related states; Ultrafast spectroscopy

Indexed keywords

AUGER RECOMBINATION; BAND GAPS; CARRIER DYNAMICS; CARRIER RELAXATION; ENERGY LEVELS; EXCITATION PHOTON ENERGY; EXCITED STATES; FLUENCE; FLUENCES; LINEAR DEPENDENCES; OXIDIZED SILICON; PHOTO-EXCITED CARRIERS; PHOTO-GENERATED CARRIERS; PHOTO-INDUCED ABSORPTION; PHOTON EXCITATION ENERGIES; RELAXATION DYNAMICS; RELAXATION MECHANISMS; SILICON NANOCRYSTALS; SURFACE-RELATED STATES; ULTRAFAST CARRIER DYNAMICS; ULTRAFAST SPECTROSCOPY;

ABSORPTION; AUGERS; CIVIL AVIATION; DYNAMICS; ELECTRIC EXCITATION; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NONMETALS; OPTICAL WAVEGUIDES; PHOTONS; SEMICONDUCTOR QUANTUM DOTS; SILICON;

SURFACE RELAXATION;

EID: 52549119179     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-008-9159-8     Document Type: Article

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