Microstructure evolution and enhanced green luminescence in P-doped ZnO nanowires

Materials Letters

Volumn 70, Issue , 2012, Pages 80-82

  Liu, J ^a   Xie, S F ^a   Cao, Y ^b   Chen, Y L ^a   Zeng, H D ^b   Yang, J H ^a   Liu, F ^a   Wang, X Y ^a  

^a UNIVERSITY OF SHANGHAI FOR SCIENCE AND TECHNOLOGY   (China)

^b EAST CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Microstructure; Optical materials and properties; Semiconductors

Indexed keywords

AXIAL GROWTH; CHEMICAL VAPOR TRANSPORT; GREEN LIGHT EMISSION; GREEN LUMINESCENCE; HE-CD LASERS; LATERAL GROWTH; MICROSTRUCTURE EVOLUTIONS; OPTICAL MATERIALS AND PROPERTIES; P-DOPED ZNO; P-DOPING; P-TYPE DOPANT; WEIGHT PERCENT; ZNO NANOWIRES; ZNO NWS;

ELECTRIC PROPERTIES; LIGHT; LIGHT EMISSION; MATERIALS PROPERTIES; MICROSTRUCTURE; NANOWIRES; OPTICAL PROPERTIES; PHOSPHORUS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS;

ZINC OXIDE;

EID: 84055178531     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2011.11.100     Document Type: Article

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