14 MeV Neutron-induced SEU in SRAM devices

IEEE Transactions on Nuclear Science

Volumn 51, Issue 5 III, 2004, Pages 2908-2911

  Flament, O ^a   Baggio, J ^a   D'Hose, C ^a   Gasiot, G ^b   Leray, J L ^a  

^a CEA DAM DIF   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Bulk SRAM; Monte Carlo; Neutron irradiations; Simulation; Soft errors

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ERROR ANALYSIS; MONTE CARLO METHODS; NEUTRON IRRADIATION; PARTICLE ACCELERATORS; SENSITIVITY ANALYSIS;

BULK SRAM; SINGLE EVENT UPSET (SEU); SOFT ERROR RATE (SER);

STATIC RANDOM ACCESS STORAGE;

EID: 8344258463     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.835073     Document Type: Article

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