Analysis of local and global transient effects in a CMOS SRAM

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Volumn , Issue , 1995, Pages 346-353

  Gardic, F ^a   Musseau, O ^a   Flament, O ^a   Brisset, C ^a   Ferlet Cavrois, V ^a   Martinez, M ^a   Carbiere, T ^a  

^a CEA DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED PARTICLES; CMOS INTEGRATED CIRCUITS; CORRELATION METHODS; ELECTRIC CURRENTS; FAILURE ANALYSIS; IRRADIATION; PROTONS; RANDOM ACCESS STORAGE; SENSITIVITY ANALYSIS; TRANSISTORS;

CORRELATED FAILURE MODES; DOSE RATE IRRADIATIONS; EPILAYER TECHNOLOGY; GLOBAL TRANSIENT EFFECTS; HEAVY ION IRRADIATIONS; LOCAL TRANSIENT EFFECTS; PROTONS IRRADIATIONS; PULSED ELECTRON GENERATOR; STATIC RANDOM ACCESS MEMORY;

RADIATION EFFECTS;

EID: 0029458924     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)