Analysis of critical doping level of sprayed SnO2:F films

Surface Engineering

Volumn 27, Issue 10, 2011, Pages 770-774

  Chinnappa, L ^a   Ravichandran, K ^b   Saravanakumar, K ^b   Jabenabegum, N ^c   Sakthivel, B ^b  

^a Raja Serfoji Government College (Autonomous)   (India)

^b A V V M SRI PUSHPAM COLLEGE   (India)

^c J J COLLEGE OF ARTS AND SCIENCE   (India)

Author keywords

Critical doping; Electrical properties; FTO films; Spray pyrolysis

Indexed keywords

DOPING LEVELS; ELECTRICAL PROPERTY; FLUORINE DOPING; FLUORINE-DOPED TIN OXIDE FILMS; MINIMUM VALUE; OXYGEN SITE; PRECURSOR CONCENTRATION; SPRAY TECHNIQUE; STARTING SOLUTIONS; VISIBLE RANGE;

ELECTRIC PROPERTIES; FLUORINE; OXIDE FILMS; SPRAY PYROLYSIS; TIN; TIN OXIDES;

SEMICONDUCTOR DOPING;

EID: 82955211503     PISSN: 02670844     EISSN: 17432944     Source Type: Journal    
DOI: 10.1179/1743294411Y.0000000021     Document Type: Article

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