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Applied Physics Letters

Volumn 95, Issue 17, 2009, Pages

Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots

(8) Jang, Y D a Park, J a Lee, D a Mowbray, D J b Skolnick, M S b Liu, H Y c Hopkinson, M b Hogg, R A b

a Chungnam National University (South Korea)

b UNIVERSITY OF SHEFFIELD (United Kingdom)

c UNIVERSITY COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB ATTRACTION; EXCESS CARRIERS; INAS/GAAS QUANTUM DOTS; MODULATION-DOPED; PL INTENSITY; QUANTUM DOTS; ROOM TEMPERATURE; SYSTEMATIC ANALYSIS; TEMPERATURE-INSENSITIVE; THERMAL ACTIVATION ENERGIES;

ACTIVATION ENERGY; CARRIER LIFETIME; ELECTRON ABSORPTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70350714204 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3255017 Document Type: Article

Times cited : (20)

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