Study of the effect of excess carrier lifetime depth profiles and depth dependent absorption coefficients on the emitted photoluminescence spectrum of chalcopyrite thin films

Progress in Photovoltaics: Research and Applications

Volumn 19, Issue 8, 2011, Pages 927-936

  Knabe, S ^a   Langemeyer, M ^a   Heidemann, F ^a   Bruggemann R ^a   Bauer, G H ^a  

^a UNIVERSITY OF OLDENBURG   (Germany)

Author keywords

absorption; chalcopyrite thin films; excess carrier concentration; lifetime; spectral photoluminescence

Indexed keywords

ABSORPTION COEFFICIENTS; BAND GAPS; BOUNDARY VALUES; CHALCOPYRITE THIN FILMS; DEPTH PROFILE; DIFFUSION EQUATIONS; EXCESS CARRIER CONCENTRATION; EXCESS CARRIERS; LIFETIME; MATRIX TRANSFER; MULTI-REFLECTION; PHOTOLUMINESCENCE SPECTRUM; PL SPECTRA; QUASI-FERMI LEVEL SPLITTING; RADIATIVE RECOMBINATION;

ABSORPTION; CARRIER CONCENTRATION; COPPER COMPOUNDS; DEFECT DENSITY; FERMI LEVEL; MULTIPHOTON PROCESSES; PARTIAL DIFFERENTIAL EQUATIONS; PHOTOLUMINESCENCE; THIN FILMS;

CARRIER LIFETIME;

EID: 82355164419     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1094     Document Type: Article

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