Interpretation of quasi-Fermi level splitting in Cu(Ga,In)Se2-absorbers by confocally recorded spectral luminescence and numerical modeling

Thin Solid Films

Volumn 517, Issue 7, 2009, Pages 2344-2348

  Knabe, Sebastian ^a   Gütay, Levent ^a   Bauer, Gottfried H ^a  

^a UNIVERSITY OF OLDENBURG   (Germany)

Author keywords

Cu(In,Ga)Se2; Multilayer optics; Quasi Fermi level splitting; Spectral luminescence

Indexed keywords

ABSORPTION; AMORPHOUS MATERIALS; CIVIL AVIATION; COPPER; ELECTRIC CURRENTS; FERMIONS; GALLIUM; LIGHT; LIGHT EMISSION; LUMINESCENCE; MULTILAYERS; MULTIPHOTON PROCESSES; OPTICAL MULTILAYERS; SEMICONDUCTING SELENIUM COMPOUNDS; THREE DIMENSIONAL;

A PLANES; CARRIER PROFILES; CU(IN,GA)SE2; DEPTH DEPENDENCES; DEPTH PROFILES; EXCESS CARRIERS; LATERAL RESOLUTIONS; LUMINESCENCE SIGNALS; MATRIX TRANSFERS; MULTI-LAYER SYSTEMS; MULTILAYER OPTICS; NUMERICAL MODELING; OPEN CIRCUITS; OPTO-ELECTRONIC PROPERTIES; POLY-CRYSTALLINE; QUASI-FERMI LEVEL SPLITTING; RADIATIVE TRANSITIONS; RE ABSORPTIONS; ROOM-TEMPERATURE PHOTOLUMINESCENCES; SPECTRAL LUMINESCENCE;

FERMI LEVEL;

EID: 58949089528     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.11.059     Document Type: Article

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