Grain boundary defects induced room temperature ferromagnetism in v doped ZnO thin films

Crystal Research and Technology

Volumn 46, Issue 12, 2011, Pages 1257-1264

  Jayalakshmi, G ^a   Gopalakrishnan, N ^a   Panigrahi, B K ^b   Balasubramanian, T ^a  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (India)

^b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

dilute magnetic semiconductor; room temperature ferromagnetism; Rutherford backscattering spectrometry; V doped ZnO; VSM

Indexed keywords

DILUTE MAGNETIC SEMICONDUCTORS; ROOM TEMPERATURE FERROMAGNETISM; RUTHERFORD BACKSCATTERING SPECTROMETRY; V DOPED ZNO; VSM;

BACKSCATTERING; DEFECTS; FERROMAGNETISM; GRAIN BOUNDARIES; IONS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL FILMS; OXYGEN; OXYGEN VACANCIES; RAMAN SCATTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR INSULATOR BOUNDARIES; SPECTROMETRY; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC;

ZINC OXIDE;

EID: 81755173963     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.201100226     Document Type: Article

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