Grain boundary defects-mediated room temperature ferromagnetism in Co-doped ZnO film

Journal of Alloys and Compounds

Volumn 482, Issue 1-2, 2009, Pages 224-228

  Liu, X J ^a   Zhu, X Y ^a,b   Luo, J T ^a   Zeng, F ^a   Pan, F ^a  

^a TSINGHUA UNIVERSITY   (China)

^b NATIONAL KEY LABORATORY FOR REMANUFACTURING   (China)

Author keywords

Defect; Diluted magnetic semiconductor; Ferromagnetism; Grain boundaries; Microstructure

Indexed keywords

BOUND MAGNETIC POLARONS; CO-DOPED ZNO; DILUTED MAGNETIC SEMICONDUCTOR; EDGE SPECTRA; FERROMAGNETIC ORDERINGS; GRAIN SIZE; GRAIN-BOUNDARY DEFECTS; PREFERRED ORIENTATIONS; ROOM TEMPERATURE FERROMAGNETISM; SATURATED MAGNETIZATION; WURTZITE; ZNO BUFFER LAYER; ZNO FILMS;

COBALT; DEFECTS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; LITHIUM COMPOUNDS; MAGNETIC SEMICONDUCTORS; METALLIC FILMS; MICROSTRUCTURE; OXYGEN; OXYGEN VACANCIES; POLARONS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; ZINC; ZINC OXIDE; ZINC SULFIDE;

FERROMAGNETISM;

EID: 67349282673     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.03.162     Document Type: Article

References (27)

1. Ueda K., Tabata H., and Kawai T. Appl. Phys. Lett. 79 (2001) 988
2. Matsumoto Y., Murakami M., Shono T., Hasegawa T., Fukumura T., Kawasaki M., Ahmet P., Chikyow T., Koshihara S., and Koinuma H. Science 291 (2001) 854-856
3. Jayakumar O.D., Gopalakrishnan I.K., Vinu A., Asthana A., and Tyagi A.K. J. Alloys Compd. 461 (2008) 608-611
4. Kim D.H., Yang J.S., Kim Y.S., Noh T.W., Du S.D., Baik S.I., Kim Y.W., Park Y.D., Pearton S.J., Kim J.Y., Park J.H., Lin H.J., Chen C.T., and Song Y.J. Phys. Rev. B 71 (2005) 014440
5. Pei G., Xia C., Wu F., and Xu J. J. Alloys Compd. 467 (2009) 539-542
6. Liu X.J., Zhu X.Y., Song C., Zeng F., and Pan F. J. Phys. D: Appl. Phys. 42 (2009) 035004
7. Sharma V.K., and Varma G.D. J. Alloys Compd. 458 (2008) 523-527
8. Tian Z.M., Yuan S.L., He J.H., Li P., Zhang S.Q., Wang C.H., Wang Y.Q., Yin S.Y., and Liu L. J. Alloys Compd. 466 (2008) 26-30
9. Ramachandran S., Narayan J., and Prater J.T. Appl. Phys. Lett. 88 (2006) 242503
10. Zhang Y.B., Li S., Liu Q., Sritharan T., and Gan C.L. Appl. Phys. Lett. 89 (2006) 042510
11. Archer P.I., and Gamelin D.R. J. Appl. Phys. 99 (2006) 08M107
12. Bryan J.D., Santangelo S.A., Keveren S.C., and Gamelin D.R. J. Am. Chem. Soc. 127 (2005) 15568-15574
13. Radovanovic P.V., and Gamelin D.R. Phys. Rev. Lett. 91 (2003) 157202
14. Hsu H.S., Huang J.C.A., Chen S.F., and Liu C.P. Appl. Phys. Lett. 90 (2007) 102506
15. Gemming S., Janisch R., Schreiber M., and Spaldin N.A. Phys. Rev. B 76 (2007) 045204
16. Robers K.G., Varela M., Rashkeev S., Pantelides S.T., Pennycook S.J., and Krishnan K.M. Phys. Rev. B 78 (2008) 014409
17. Ankudinov A.L., Ravel B., Rehr J.J., and Conradson S.D. Phys. Rev. B 58 (1998) 7565
18. Liao X., Zhang X., and Li S. Nanotechnology 19 (2008) 225303
19. Liu X.J., Song C., Zeng F., Pan F., He B., and Yan W.S. J. Appl. Phys. 103 (2008) 093911
20. Park D.J., Lee J.Y., Park T.E., Kim Y.Y., and Cho H.K. Thin Solid Films 515 (2007) 6721-6725
21. Pan F., Song C., Liu X.J., Yang Y.C., and Zeng F. Mater. Sci. Eng. R-Rep. 62 (2008) 1-35
22. Coey J.M.D., Venkatesan M., and Fitzgerald C.B. Nat. Mater. 4 (2005) 173-179
23. Biegger E., Fonin M., Rüdiger U., Janβen N., Beyer M., Thomay T., Bratschisch R., and Dedkov Y.S. J. Appl. Phys. 101 (2007) 073904
24. Meng H.J., Hou D.L., Jia L.Y., Ye X.J., Zhou H.J., and Li X.L. J. Appl. Phys. 102 (2007) 073905
25. Weng H., Yang X., Dong J., Mizuseki H., Kawasaki M., and Kawazoe Y. Phys. Rev. B 69 (2004) 125219
26. Schwartz D.A., Norberg N.S., Nguyen Q.P., Parker J.M., and Gamelin D.R. J. Am. Chem. Soc. 125 (2003) 13205-13218
27. Zhou X., Ge S., Yao D., Zuo Y., and Xiao Y. J. Alloys Compd. 463 (2008) L9-L11