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Applied Physics Letters

Volumn 96, Issue 26, 2010, Pages

Reduced room-temperature ferromagnetism in intermediate conducting regime of v doped ZnO

(8) Liu, S H a Hsu, H S b Venkataiah, G a Qi, X a Lin, C R c Lee, J F d Liang, K S d Huang, J C A a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b National Pintung University of Education (Taiwan)

c SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

d NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TREATMENTS; BOUND MAGNETIC POLARONS; DIRECT OBSERVATION; DOPING CONCENTRATION; FREE CARRIERS; ROOM TEMPERATURE FERROMAGNETISM; V-DOPED ZNO; ZNO; ZNO POWDER;

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; MAGNETIC PROPERTIES; POLARONS; ZINC OXIDE;

FERROMAGNETISM;

EID: 77954346311 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3456381 Document Type: Article

Times cited : (23)

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