Nitrogen plasma-assisted codoped P-type (In, N):SnO2 ultra-fine thin films and N-ZnO/p-In:SnO2 core-shell heterojunction diodes fabricated by an ultrasonic spray pyrolysis method

Journal of Physical Chemistry C

Volumn 115, Issue 46, 2011, Pages 23113-23119

  Chantarat, N ^a   Chen, Yu Wei ^a   Lin, Chin Ching ^b   Chiang, Mei Ching ^b   Chen, Yu Chun ^b   Chen, San Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CO-DOPED; CO-DOPED SNO; CORE-SHELL; CRYSTALLINE PHASIS; CURRENT VOLTAGE; DEPTH PROFILE; DOPED SAMPLE; DOPING CONCENTRATION; ELEMENTAL COMPOSITIONS; ELEMENTAL DISTRIBUTION; HALL MEASUREMENTS; HETEROJUNCTION DIODES; HOLE CARRIERS; HOST MATRICES; NITROGEN PLASMA TREATMENT; ORDERS OF MAGNITUDE; P-TYPE; SECONDARY PHASE; SN-DOPED; SOLUTION MIXTURES; THERMAL-ANNEALING; TREATMENT DURATION; ULTRASONIC SPRAY PYROLYSIS METHOD; ZNO NANOROD ARRAYS;

ATOMIC SPECTROSCOPY; BOND STRENGTH (CHEMICAL); HETEROJUNCTIONS; NANORODS; NITROGEN PLASMA; PLASMA APPLICATIONS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; THIN FILMS; TIN; TIN OXIDES; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

SPRAY PYROLYSIS;

EID: 81755171913     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp206091s     Document Type: Article

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