Tristate memory using ferroelectric-insulator-semiconductor heterojunctions for 50% increased data storage

Advanced Functional Materials

Volumn 21, Issue 22, 2011, Pages 4305-4313

  Park, Min Hyuk ^a   Lee, Hyun Ju ^a   Kim, Gun Hwan ^a   Kim, Yu Jin ^a   Kim, Jeong Hwan ^a   Lee, Jong Ho ^a   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

Author keywords

aluminum oxide; ferroelectric memory; semiconductors; tristate memory; tunnel switches; zinc oxide

Indexed keywords

ACTUAL OPERATION; ALUMINUM OXIDES; BOTTOM ELECTRODES; CELL SIZE; CHARGE STATE; DATA STORAGE; ELECTRICAL RESPONSE; EXTERNAL STIMULUS; FERROELECTRIC MEMORY; FERROELECTRIC RANDOM ACCESS MEMORIES; HIGH-DENSITY; MEMORY CELL SIZE; MEMORY DENSITY; MEMORY FUNCTIONS; MEMORY STATE; PB(ZR , TI)O; POLARIZATION SWITCHING; SIZE SCALING; STACKED STRUCTURE; TRAPPED CHARGE; TRISTATE MEMORY; ZNO LAYERS;

ALUMINUM; CELLS; CRYSTAL STRUCTURE; ELECTRODES; FERROELECTRIC MATERIALS; FERROELECTRICITY; HETEROJUNCTIONS; LEAD; PLATINUM; SEMICONDUCTOR MATERIALS; ZINC OXIDE; ZIRCONIUM;

RANDOM ACCESS STORAGE;

EID: 81555229448     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201101073     Document Type: Article

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