Cyclotron resonance and interband optical transitions in HgTe/CdTe(0 1 3) quantum well heterostructures

Semiconductor Science and Technology

Volumn 26, Issue 12, 2011, Pages

  Ikonnikov, A V ^a   Zholudev, M S ^a   Spirin, K E ^a   Lastovkin, A A ^a   Maremyanin, K V ^a   Aleshkin, V Ya ^a   Gavrilenko, V I ^a   Drachenko, O ^b   Helm, M ^b   Wosnitza, J ^b   Goiran, M ^c   Mikhailov, N N ^d   Dvoretskii, S A ^d   Teppe, F ^e   Diakonova, N ^e   Consejo, C ^e   Chenaud, B ^e   Knap, W ^e  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c UNIVERSITÉ DE TOULOUSE   (France)

^d INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^e UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CDTE; CYCLOTRON MASS; ELECTRON CONCENTRATION; HGTE/CDTE; INTERBAND; KANE MODEL; LANDAU LEVEL FILLING FACTORS; LANDAU LEVELS; MAGNETO-ABSORPTION; MATERIAL PARAMETER; OPTICAL TRANSITION ENERGIES; PERSISTENT PHOTOCONDUCTIVITY; PULSED MAGNETIC FIELDS; QUANTUM WELL; QUANTUM WELL HETEROSTRUCTURES; RADIATION WAVELENGTH; TRANSITION ENERGY;

BAND STRUCTURE; CRYSTALS; CYCLOTRON RESONANCE; MAGNETIC FIELDS; OPTICAL TRANSITIONS; SEMICONDUCTOR QUANTUM WELLS;

CYCLOTRONS;

EID: 81555203205     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/12/125011     Document Type: Article

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