Growth of HgTe quantum wells for IR to THz detectors

Journal of Electronic Materials

Volumn 39, Issue 7, 2010, Pages 918-923

  Dvoretsky, S ^a   Mikhailov, N ^a   Sidorov, Yu ^a   Shvets, V ^a   Danilov, S ^b   Wittman, B ^b   Ganichev, S ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

Detector; Ellipsometric parameters; Far infrared; Growth; HgCdTe; HgTe; MBE; Mid infrared; Quantum wells (QWs)

Indexed keywords

ELLIPSOMETRIC PARAMETERS; FAR-INFRARED; HGCDTE; HGTE; MIDINFRARED; QUANTUM WELL;

CONTINUOUS WAVE LASERS; CRYSTAL GROWTH; DETECTORS; ELLIPSOMETRY; FRACTURE; GALLIUM ALLOYS; INFRARED DEVICES; MERCURY (METAL); MERCURY COMPOUNDS; PULSED LASER APPLICATIONS; PULSED LASERS; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS; TELLURIUM COMPOUNDS; TERAHERTZ WAVES;

TERAHERTZ WAVE DETECTORS;

EID: 77954620288     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1191-7     Document Type: Conference Paper

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