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Physical Review Letters

Volumn 104, Issue 16, 2010, Pages

Quantum hall effect near the charge neutrality point in a two-dimensional electron-hole system

(6) Gusev, G M a Olshanetsky, E B a,b Kvon, Z D b Mikhailov, N N b Dvoretsky, S A b Portal, J C c,d,e

a UNIVERSITY OF SÃO PAULO (Brazil)

b INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

c GRENOBLE HIGH MAGNETIC FIELD LABORATORY (France)

d INSA (France)

e INSTITUT UNIVERSITAIRE DE FRANCE (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE NEUTRALITY; DIAGONAL CONDUCTIVITY; ELECTRON HOLE; ELECTRON HOLE SYSTEM; ELECTRONS AND HOLES; HALL CONDUCTIVITY; HALL RESISTIVITY; HOLE DENSITIES; LANDAU LEVEL FILLING FACTORS; MEAN VALUES; QUANTUM HALL EFFECT; QUANTUM WELL;

ELECTRONS; GYRATORS; HALL EFFECT; HALL EFFECT DEVICES; HIGHWAY PLANNING; QUANTUM CHEMISTRY; QUANTUM THEORY; TRANSPORT PROPERTIES;

MAGNETIC FIELD EFFECTS;

EID: 77951095097 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.104.166401 Document Type: Article

Times cited : (53)

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