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Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 376, Issue 2, 2011, Pages 136-141

Valley polarized electronic transport through a line defect in graphene: An analytical approach based on tight-binding model

(3) Jiang, Liwei a Lv, Xiaoling a Zheng, Yisong a

a JILIN UNIVERSITY (China)

Author keywords

Graphene; Line defect; Valley polarization

Indexed keywords

EID: 81255192215 PISSN: 03759601 EISSN: None Source Type: Journal
DOI: 10.1016/j.physleta.2011.10.043 Document Type: Article

Times cited : (17)

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