Self-controlled writing and erasing in a memristor crossbar memory

IEEE Transactions on Nanotechnology

Volumn 10, Issue 6, 2011, Pages 1454-1463

  Ebong, Idongesit E ^a   Mazumder, Pinaki ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Memristor; resistive random access memory (RAM)

Indexed keywords

ANALYSIS MODELS; CELL SIZE; CROSS-BAR MEMORIES; CROSS-BAR STRUCTURES; DEVICE TECHNOLOGIES; ENERGY-PER-BIT; LOW-YIELD; MEMORY SYSTEMS; MEMORY TECHNOLOGY; MEMRISTOR; NON-VOLATILE MEMORIES; POWER METRICS; RESEARCH COMMUNITIES; RESISTIVE RANDOM ACCESS MEMORY; SIMULATION PROGRAM WITH INTEGRATED CIRCUIT EMPHASIS;

COMPUTER SIMULATION; ENERGY UTILIZATION; FLASH MEMORY; MEMRISTORS; PASSIVE FILTERS; RESISTORS; SPICE;

RANDOM ACCESS STORAGE;

EID: 81255175492     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2011.2166805     Document Type: Article

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