Local charge neutrality condition, Fermi level and majority carrier density of a semiconductor with multiple localized multi-level intrinsic/impurity defects

Journal of Semiconductors

Volumn 32, Issue 11, 2011, Pages

  Chin, Ken K ^a,b  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b BEIHANG UNIVERSITY   (China)

Author keywords

defect complex; Fermi level; impurity; intrinsic; majority carrier density; multi level defects; semiconductor

Indexed keywords

DEFECT COMPLEX; INTRINSIC; MAJORITY CARRIERS; MULTI-LEVEL; SEMICONDUCTOR;

CARRIER CONCENTRATION; DEFECTS; FERMI LEVEL; GRAPHIC METHODS; IMPURITIES; SEMICONDUCTOR DOPING;

DEFECT DENSITY;

EID: 81255152392     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/32/11/112001     Document Type: Article

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