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Volumn , Issue , 2010, Pages 1915-1918

The roles of Cu impurity states in CdTe thin film solar cells

Author keywords

[No Author keywords available]

Indexed keywords

BACK CONTACT; CD VACANCY; CDS; CDTE; CU DIFFUSION; CU IMPURITY; DETRIMENTAL EFFECTS; ELECTRICAL PROPERTY; HIGH EFFICIENCY DEVICES; IV CHARACTERIZATION; LOW CONDUCTIVITY; LOW LEVEL; MINORITY CARRIER LIFETIMES; P-TYPE; PUZZLING EFFECT; SELF COMPENSATION; SHALLOW DONORS; SHUNT RESISTANCES; THIN FILM SOLAR CELLS; TIME-RESOLVED PHOTOLUMINESCENCE; TREATMENT TEMPERATURE;

EID: 78650155248     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5616379     Document Type: Conference Paper
Times cited : (20)

References (12)
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  • 3
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  • 5
    • 42249114488 scopus 로고    scopus 로고
    • 19.9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill factor
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  • 8
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  • 10
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    • Dependence of carrier lifetime on copper-contacting temperature and ZnTe:Cu thickness in CdS/CdTe thin film solar cells
    • T. A. Gessert, W. K. Metzger, P. Dippo, S. E. Asher, R. G. Dhere, and M. R. Young, "Dependence of Carrier Lifetime on Copper-contacting Temperature and ZnTe:Cu Thickness in CdS/CdTe Thin Film Solar Cells," Thin Solid Films 517, 2370-2373 (2009).
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    • P-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.