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Volumn 32, Issue 6, 2011, Pages

Approximate graphical method of solving Fermi level and majority carrier density of semiconductors with multiple donors and multiple acceptors

Author keywords

carrier density; compensation; Doping; Fermi level; graphical method; ionization

Indexed keywords

CARRIER COMPENSATION; CROSSING POINT; GRAPHICAL METHODS; MAJORITY CARRIERS; STEP FUNCTIONS;

EID: 79960037194     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/32/6/062001     Document Type: Article
Times cited : (8)

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    • Mamazza R Jr, Morel D L, Ferekides C S 2005 Transparent conducting oxide thin films of Cd2SnO4 prepared by RF magnetron co-sputtering of the constituent binary oxides Thin Solid Films 484 (1/2) 26
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    • Gessert T A, Metzger W K, Dippo P, et al 2009 Dependence of carrier lifetime on copper-contacting temperature and ZnTe: Cu thickness in CdS/CdTe thin film solar cells Thin Solid Films 517 2370
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.