Dependence of carrier lifetime on Cu-contacting temperature and ZnTe:Cu thickness in CdS/CdTe thin film solar cells

Thin Solid Films

Volumn 517, Issue 7, 2009, Pages 2370-2373

  Gessert, T A ^a   Metzger, W K ^a   Dippo, P ^a   Asher, S E ^a   Dhere, R G ^a   Young, M R ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Cadmium telluride; Copper; Solar cells

Indexed keywords

CADMIUM; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CARRIER CONCENTRATION; CARRIER LIFETIME; CIVIL AVIATION; PHOTOVOLTAIC CELLS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SOLAR CELLS; SOLAR EQUIPMENT; SOLAR POWER GENERATION; ZINC COMPOUNDS;

ACCEPTOR CONCENTRATIONS; CADMIUM TELLURIDE; CDS/CDTE; CDS/CDTE THIN FILM SOLAR CELLS; CDTE DEVICES; CDTE LAYERS; CONTACT TEMPERATURES; CU CONTACTS; CU DIFFUSIONS; CU LAYERS; CURRENT COLLECTIONS; HIGH-PERFORMANCE DEVICES; OPEN-CIRCUIT VOLTAGES; OPTIMUM VALUES; PHOTOVOLTAIC SOLAR CELLS; SPACE CHARGES; TIME-RESOLVED PHOTOLUMINESCENCES;

COPPER;

EID: 58949098288     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.11.008     Document Type: Article

References (10)

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