Mechanism of sulfur incorporation into solution processed CuIn(Se,S) 2 films

Chemistry of Materials

Volumn 23, Issue 22, 2011, Pages 4941-4946

  Chung, Choong Heui ^a   Lei, Bao ^a   Bob, Brion ^a   Li, Sheng Han ^a   Hou, William W ^a   Duan, Hsin Sheng ^a   Yang, Yang ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

band gap; CuIn(Se; hydrazine; molecular precursors; S)2; Solar cells

Indexed keywords

ABSORBER LAYERS; ANNEALED FILMS; BONDING ENVIRONMENT; COMPOSITIONAL INFORMATION; CUIN(SE ,S); ENERGY BANDGAPS; HIGH VOLATILITY; MOLECULAR PRECURSOR; PHOTOVOLTAIC DEVICES; PRECURSOR SOLUTIONS; S)2; SOLUTION-PROCESSED; SULFUR CONTENTS; SULFUR INCORPORATION; WEAK INTERACTIONS;

COPPER; ENERGY GAP; HYDRAZINE; INDIUM; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SOLAR CELLS; SOLAR ENERGY; SOLAR POWER GENERATION; SULFUR;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 81255152372     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm201827c     Document Type: Article

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