Dirac voltage tunability by Hf1-xLaxO gate dielectric composition modulation for graphene field effect devices

Applied Physics Letters

Volumn 99, Issue 19, 2011, Pages

  Gun Oh, Joong ^a   Shin, Yunsang ^a   Cheol Shin, Woo ^a   Sul, Onejae ^a   Jin Cho, Byung ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE NEUTRALITY; DIELECTRIC COMPOSITIONS; FIELD-EFFECT DEVICES; HYGROSCOPIC NATURE; P-DOPING; VOLTAGE TUNABILITY; WATER MOLECULE;

DIELECTRIC MATERIALS; DRIERS (MATERIALS); GATE DIELECTRICS; GRAPHENE; HAFNIUM; LANTHANUM; LANTHANUM ALLOYS; MESFET DEVICES; SEMICONDUCTOR DOPING;

LANTHANUM OXIDES;

EID: 81155148685     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3659691     Document Type: Article

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