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Volumn 99, Issue 17, 2011, Pages

Microwave evaluation of Pb0.4Sr0.6TiO3 thin films prepared by magnetron sputtering on silicon: Performance comparison with Ba0.3Sr0.7TiO3 thin films

(5) Ponchel, F a Lei, X b Rmiens D a Wang, G b Dong, X b

a INSTITUT D ELECTRONIQUE (France)

b SHANGHAI INSTITUTE OF CERAMICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

AGILE DEVICES; ALTERNATIVE MATERIALS; FREQUENCY RANGES; HIGH-RESISTIVITY SILICON SUBSTRATE; LOSS FACTOR; LOW LOSS; LOW THERMAL BUDGET; MONOLITHIC INTEGRATION; PERFORMANCE COMPARISON; POST-ANNEALING TEMPERATURE; PURE PEROVSKITE PHASE; RADIO FREQUENCY MAGNETRON SPUTTERING; RELATIVE DIELECTRIC CONSTANT; TIO; TUNABILITIES;

BARIUM; DIELECTRIC MATERIALS; LEAD; MONOLITHIC INTEGRATED CIRCUITS; PEROVSKITE; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80555145150 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3656065 Document Type: Article

Times cited : (14)

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