Quintuple-period Si atomic wires with alternative double and triple modulations by metal: Mg/Si(557)

Surface Science

Volumn 606, Issue 1-2, 2012, Pages 57-61

  Shin, B G ^a   Kim, M K ^a   Lee, J H ^a   Oh, D H ^a   Song, I ^a   Woo, S H ^b   Park, C Y ^a   Ahn, J R ^a  

^a Sungkyunkwan University   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

Atomic wire; Low energy electron diffraction; Scanning tunneling microscopy; Vicinal Si surface

Indexed keywords

ATOMIC WIRES; FIRST-PRINCIPLES CALCULATION; QUASI-ONE-DIMENSIONAL; SCANNING TUNNELING MICROSCOPY (STM); STEP EDGE; STM IMAGES; UNIT CELLS; VICINAL SI SURFACE;

ATOMS; BALLOONS; CALCULATIONS; DIFFRACTION; LOW ENERGY ELECTRON DIFFRACTION; NANOWIRES; SCANNING TUNNELING MICROSCOPY; SILICON; WIRE;

CRYSTAL ATOMIC STRUCTURE;

EID: 80255131346     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2011.08.021     Document Type: Article

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