New model for Si(111)-(3 × 1)Li through determination of its surface Si atom density with the use of scanning tunneling microscopy

Surface Science

Volumn 405, Issue 2-3, 1998, Pages

  Hasegawa, Shigehiko ^a   Maruyama, Masakatsu ^a   Hirata, Yoshitane ^a   Abe, Daisuke ^a   Nakashima, Hisao ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Lithium; Scanning tunneling microscopy; Silicon; Surface relaxation and reconstruction; Surface structure, morphology, roughness and topography

Indexed keywords

ADSORPTION; ELECTRONIC PROPERTIES; LITHIUM; MORPHOLOGY; NUCLEATION; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE MEASUREMENT; SURFACE ROUGHNESS; SURFACE TREATMENT;

ATOM DENSITY; SURFACE RECONSTRUCTURE; SURFACE RELAXATION; SURFACE TOPOGRAPHY;

SURFACE STRUCTURE;

EID: 0032072209     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00096-X     Document Type: Article

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