SCOPUS 정보 검색 플랫폼

Volumn 110, Issue 7, 2011, Pages

Threshold voltage control of Pt-Ti-O gate Si-metal-insulator semiconductor field-effect transistors hydrogen gas sensors by using oxygen invasion into Ti layers

(2) Usagawa, Toshiyuki a Kikuchi, Yota a

a HITACHI LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AIR-ANNEALING; DEVICE OPERATIONS; DOPANT DIFFUSION; FULLY DEPLETED; HYDROGEN GAS SENSORS; INVASION PROCESS; ION DOSE; MIXING LAYERS; NANOCRYSTALLINES; OXYGEN-DOPED; POST ANNEALING; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SENSING AMPLITUDE;

AMORPHOUS SILICON; ANNEALING; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); GAS DETECTORS; GRAIN BOUNDARIES; HYDROGEN; METAL ANALYSIS; METAL INSULATOR BOUNDARIES; MOSFET DEVICES; NANOSENSORS; OXYGEN; PLATINUM; SILICON; SILICON WAFERS; THRESHOLD VOLTAGE; VANADIUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80055017736 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3645028 Document Type: Article

Times cited : (7)

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