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Volumn 3, Issue 4, 2010, Pages
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Air-annealing effects for Pt/Ti Gate Si-metal-oxide-semiconductor field-effect transistors hydrogen gas sensor
a
a
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
AIR-ANNEALING;
AUGER ANALYSIS;
BEFORE AND AFTER;
GATE OXIDE;
HYDROGEN GAS;
HYDROGEN GAS SENSORS;
HYDROGEN-SENSING;
METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR;
MOSFETS;
NANOCRYSTALLINE TIO;
OXYGEN-DOPED;
SENSING AMPLITUDE;
SENSOR CHARACTERISTICS;
TRANSMISSION ELECTRON MICROSCOPE;
ANNEALING;
DIELECTRIC DEVICES;
ELECTRON MICROSCOPES;
FIELD EFFECT TRANSISTORS;
HYDROGEN;
ION BEAMS;
METAL ANALYSIS;
MOS DEVICES;
MOSFET DEVICES;
OXYGEN;
PLATINUM;
SEMICONDUCTING SILICON COMPOUNDS;
SENSORS;
TRANSMISSION ELECTRON MICROSCOPY;
SEMICONDUCTING SILICON;
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EID: 77950672617
PISSN: 18820778
EISSN: 18820786
Source Type: Journal
DOI: 10.1143/APEX.3.047201 Document Type: Article |
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Times cited : (12)
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References (8)
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