A novel Pt-Ti-O gate Si-metal-insulator-semiconductor field-effect transistor hydrogen gas sensor

Proceedings of IEEE Sensors

Volumn , Issue , 2010, Pages 2145-2148

  Usagawa, Toshiyuki ^a   Kikuchi, Yota ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTED HYDROGEN; GATE STRUCTURE; HYDROGEN GAS SENSORS; HYDROGEN SENSOR; LIFE-TIMES; LINEAR FUNCTIONS; LONG LIFE; METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MIXED LAYER; MOSFETS; NANOCRYSTALLINES; OXYGEN-DOPED; SENSING AMPLITUDE; SI SUBSTRATES; TEMPERATURE AGING;

ALGEBRA; FIELD EFFECT TRANSISTORS; GAS DETECTORS; HYDROGEN; MESFET DEVICES; METAL ANALYSIS; METAL INSULATOR BOUNDARIES; MIS DEVICES; OXYGEN; PLATINUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS; TESTING; TITANIUM;

SENSORS;

EID: 79951885638     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSENS.2010.5690525     Document Type: Conference Paper

References (12)

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