A Pt-Ti-O gate Si-metal-insulator-semiconductor field-effect transistor hydrogen gas sensor

Journal of Applied Physics

Volumn 108, Issue 7, 2010, Pages

  Usagawa, Toshiyuki ^a   Kikuchi, Yota ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTED HYDROGEN; ENERGY DISPERSIVE X RAY SPECTROSCOPY; GATE STRUCTURE; HIGH GRADIENT; HIGH RELIABILITY; HYDROGEN GAS SENSORS; HYDROGEN SENSOR; LINEAR FUNCTIONS; METAL OXIDE SEMICONDUCTOR STRUCTURES; METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MIS STRUCTURE; MIXED LAYER; MONITORING SENSORS; NANOCRYSTALLINE TIO; OXYGEN-DOPED; POST ANNEALING; SENSING AMPLITUDE; SENSING APPLICATIONS; SENSING RANGES; SI SUBSTRATES; TEM; THRESHOLD VOLTAGE SHIFTS; TRANSMISSION ELECTRON MICROSCOPE;

ALGEBRA; AUGER ELECTRON SPECTROSCOPY; CHEMICAL SENSORS; FIELD EFFECT TRANSISTORS; GAS DETECTORS; HYDROGEN; METAL INSULATOR BOUNDARIES; MIS DEVICES; MISFET DEVICES; OXYGEN; PLATINUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON OXIDES; THRESHOLD VOLTAGE; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 77958162454     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3483942     Document Type: Article

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