Conducting channel formation in poly(3-hexylthiophene) field effect transistors: Bulk to interface

Journal of Physical Chemistry C

Volumn 115, Issue 23, 2011, Pages 11719-11726

  Park, Byoungnam ^a   Aiyar, Avishek ^a   Park, Min Sang ^a   Srinivasarao, Mohan ^a,b   Reichmanis, Elsa ^a,b  

^a Georgia Institute of Technology   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC DEGRADATION; CHANNEL FORMATION; CONDUCTANCE MEASUREMENT; CONDUCTING CHANNELS; CRITICAL FACTORS; CRITICAL STEPS; DEVICE PERFORMANCE; DIELECTRIC INTERFACE; FIELD-EFFECT DEVICES; IN-SITU; IN-SITU MEASUREMENT; LIQUID-CRYSTALLINE; PEAK VALUES; POLY-3-HEXYLTHIOPHENE; POLYCRYSTALLINE PHASIS; POLYMER MOLECULE; SOLIDIFICATION PROCESS; SOLUTION-PROCESSED; SOLVENT EVAPORATION; STRUCTURAL ORGANIZATION;

CARRIER MOBILITY; DRAIN CURRENT; ELECTRIC PROPERTIES; PHASE TRANSITIONS; SOLVENTS; TRANSPORT PROPERTIES;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 80055015779     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp111677x     Document Type: Article

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