Barrier/bonding layers on bismuth telluride (Bi 2Te 3) for high temperature thermoelectric modules

Journal of Materials Science: Materials in Electronics

Volumn 22, Issue 9, 2011, Pages 1313-1320

  Lin, Wen P ^a   Wesolowski, Daniel E ^a   Lee, Chin C ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AG ELECTRODE; ANNEALING PROCESS; BISMUTH TELLURIDE; ELECTRODE MATERIAL; HIGH TEMPERATURE; HIGH-TEMPERATURE THERMOELECTRIC APPLICATIONS; STEP COVERAGE; THERMOELECTRIC MODULES;

BISMUTH; SILVER; THERMOELECTRICITY;

NANOCOMPOSITE FILMS;

EID: 80054985854     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-011-0306-0     Document Type: Article

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