Bonding/barrier layers on bismuth telluride (Bi2Te3) for high temperature applications

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2010, Pages 447-450

  Lin, Wen P ^a   Wang, Pin J ^a,b   Lee, Chin C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Ag in; Barrier structure; Bismuth telluride; Fluxless bonding; Peltier effect; TLP; Transient liquid phase bonding

Indexed keywords

A-THERMAL; BARRIER STRUCTURES; BISMUTH TELLURIDE; ENERGY DISPERSIVE X-RAY; FLUXLESS BONDING; HIGH-TEMPERATURE THERMOELECTRIC APPLICATIONS; MATERIALS AND PROCESS; SCANNING ELECTRON MICROSCOPES; TRANSIENT LIQUID PHASE BONDING;

BISMUTH; HIGH TEMPERATURE APPLICATIONS; LIQUIDS; PALLADIUM; SCANNING ELECTRON MICROSCOPY; SILVER; TELLURIUM COMPOUNDS; X RAY MICROSCOPES;

PELTIER EFFECT;

EID: 77955222758     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2010.5490934     Document Type: Conference Paper

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