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Volumn 406, Issue 22, 2011, Pages 4227-4232
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Optical properties of Ge-As-Te thin films
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Author keywords
Band structure; Chalcogenides; III V semiconductors; Optical spectroscopy; Tellurites; X ray diffraction
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Indexed keywords
AMORPHOUS FILMS;
BAND STRUCTURE;
CHALCOGENIDES;
ELECTROMAGNETIC WAVE ABSORPTION;
ENERGY GAP;
GERMANIUM;
GLASS;
III-V SEMICONDUCTORS;
INORGANIC COMPOUNDS;
LIGHT ABSORPTION;
OPTICAL BAND GAPS;
OPTICAL PROPERTIES;
OSCILLATORS (ELECTRONIC);
REFRACTIVE INDEX;
SUBSTRATES;
THERMAL EVAPORATION;
X RAY DIFFRACTION;
CLEANED GLASS SUBSTRATES;
COMPLEX INDEX OF REFRACTION;
ELECTRONIC-POLARIZABILITY;
INTERFERENCE FRINGE;
OPTICAL SPECTROSCOPY;
TELLURITES;
THERMAL EVAPORATION METHOD;
TRANSMISSION SPECTRUMS;
THIN FILMS;
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EID: 80054983882
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2011.08.013 Document Type: Article |
Times cited : (61)
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References (31)
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