Gate control and amplification of magnetoresistance in a three-terminal device

Applied Physics Letters

Volumn 99, Issue 15, 2011, Pages

  Kum, Hyun ^a   Jahangir, Shafat ^a   Basu, Debashish ^a   Saha, Dipankar ^b   Bhattacharya, Pallab ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; DRIFT DIFFUSION; FERROMAGNETIC SPIN; GAAS; GATE CONTROL; GATE ELECTRODES; GATE TERMINALS; NONMAGNETICS; ROOM TEMPERATURE; SPIN VALVE; THREE-TERMINAL DEVICES; TUNNEL BARRIER;

AMPLIFICATION; DIRECT INJECTION; GALLIUM ALLOYS; GALLIUM ARSENIDE; MAGNETOELECTRONICS; MAGNETORESISTANCE; PHOSPHORUS; SEMICONDUCTING GALLIUM;

ELECTRIC RESISTANCE;

EID: 80054978324     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3652765     Document Type: Article

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