Suppression of electron spin relaxation in mn-doped GaAs

Physical Review Letters

Volumn 101, Issue 7, 2008, Pages

  Astakhov, G V ^a   Dzhioev, R I ^b   Kavokin, K V ^b   Korenev, V L ^b   Lazarev, M V ^b   Tkachuk, M N ^b   Kusrayev, Yu G ^b   Kiessling, T ^a   Ossau, W ^a   Molenkamp, L W ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; ATOMS; ELECTRONS; GALLIUM ALLOYS; ION EXCHANGE; MANGANESE; MANGANESE COMPOUNDS; OPTICAL PUMPING; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM;

ANTIFERROMAGNETIC EXCHANGE INTERACTIONS; ELECTRON-SPIN RELAXATION; FLUCTUATING FIELDS; OPTICAL-; PARTIAL COMPENSATION; SPIN MEMORIES; SPIN RELAXATION TIME; SPIN-RELAXATION RATES;

SPIN DYNAMICS;

EID: 49749110339     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.101.076602     Document Type: Article

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