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Current Applied Physics

Volumn 12, Issue 1, 2012, Pages 331-336

Electrical bistability of tris-(8-hydroxyquinoline) aluminum (Alq 3)/ZnSe organic-inorganic bistable device

(4) Onlaor, K a,b Tunhoo, B a,b Thiwawong, T a,b Nukeaw, J a,b

a KING MONGKUT'S INSTITUTE OF TECHNOLOGY LADKRABANG (Thailand)

b Thailand Ministry of Science and Technology (Thailand)

Author keywords

Bistable device; Conduction mechanism; Memory characteristics; Memory device; Organic inorganic nanodevice

Indexed keywords

BISTABLE DEVICES; CONDUCTION MECHANISM; MEMORY CHARACTERISTICS; MEMORY DEVICE; ORGANIC-INORGANIC;

ALUMINUM; CURRENT VOLTAGE CHARACTERISTICS; ENCAPSULATION; THERMIONIC EMISSION;

EQUIPMENT;

EID: 80054794983 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2011.07.004 Document Type: Article

Times cited : (14)

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