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Volumn , Issue , 2011, Pages 3042-3048

Reconfigurable N-level memristor memory design

Author keywords

[No Author keywords available]

Indexed keywords

HIGH DENSITY; ION MOBILITY; LOW POWER; MEMORY DESIGN; MEMRISTOR; NON-VOLATILE MEMORIES; PROCESS VARIATION; PROPOSED ARCHITECTURES; RE-CONFIGURABLE; RESISTANCE STATE; RESISTIVE RANDOM ACCESS MEMORY;

EID: 80054770037     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IJCNN.2011.6033622     Document Type: Conference Paper
Times cited : (32)

References (17)
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  • 3
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    • Chung, A.1    Deen, J.2    Lee, J.-S.3    Meyyappan, M.4
  • 4
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    • Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application
    • Y. C. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, "Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application," Nano Letters, vol. 9, no. 4, pp. 1636-1643, 2009.
    • (2009) Nano Letters , vol.9 , Issue.4 , pp. 1636-1643
    • Yang, Y.C.1    Pan, F.2    Liu, Q.3    Liu, M.4    Zeng, F.5
  • 6
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    • Spintronic memristor through spin torque induced magnetization motion
    • March
    • X. Wang, H. Xi, Y. Chen, H. Li, and D. Dimitrov, "Spintronic memristor through spin torque induced magnetization motion," IEEE Electron Device Letters, vol. 30, no. 3, pp. 294-297, March 2009.
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    • Wang, X.1    Xi, H.2    Chen, Y.3    Li, H.4    Dimitrov, D.5
  • 10
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    • Nanoscale memristor device as synapse in neuromorphic systems
    • pMID: 20192230
    • S. H. Jo, T. Chang, I. Ebong, B. B. Bhadviya, P. Mazumder, and W. Lu, "Nanoscale memristor device as synapse in neuromorphic systems," Nano Letters, vol. 10, no. 4, pp. 1297-1301, 2010, pMID: 20192230.
    • (2010) Nano Letters , vol.10 , Issue.4 , pp. 1297-1301
    • Jo, S.H.1    Chang, T.2    Ebong, I.3    Bhadviya, B.B.4    Mazumder, P.5    Lu, W.6
  • 13
    • 0016918810 scopus 로고
    • Memristive devices and systems
    • Feb.
    • L. Chua and S. M. Kang, "Memristive devices and systems," Proceedings of the IEEE, vol. 64, no. 2, pp. 209-223, Feb. 1976.
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  • 14
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    • Generalized nernst-einstein relations for nonlinear transport coefficients
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  • 16
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    • Exponential ionic drift: Fast switching and low volatility ofthin-film memristors
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.