Effect of Ni on the growth and photoelectrochemical properties of ZnS thin films

Materials Chemistry and Physics

Volumn 117, Issue 1, 2009, Pages 156-162

  Huang, Chao Ming ^a   Chen, Lung Chuan ^a   Pan, Guan Ting ^b   Yang, Thomas C K ^b   Chang, Wei Sheng ^c   Cheng, Kong Wei ^d  

^a KUN SHAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^d CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Chemical synthesis; Electrical properties; Semiconductors; Thin films

Indexed keywords

CATHODIC PHOTOCURRENT; CHEMICAL BATH DEPOSITION PROCESS; CHEMICAL SYNTHESIS; CONCENTRATION OF; ELECTRICAL PROPERTIES; ENERGY BANDGAP; EXTERNAL POTENTIAL; FLAT BAND; HEXAGONAL WURTZITE STRUCTURE; ION DEPOSITION; LOWER ENERGIES; MOLAR RATIO; NI-DOPED; P-TYPE; PHOTO-ELECTRODES; PHOTOCURRENT DENSITY; PHOTOELECTROCHEMICAL PROPERTIES; POSITIVE VALUE; PREFERENTIAL ORIENTATION; PT ELECTRODE; SCANNING ELECTRON MICROSCOPE; SEMICONDUCTORS; STARTING SOLUTIONS; ZNS FILMS; ZNS THIN FILMS;

DEPOSITION; DIFFRACTION; ELECTRIC PROPERTIES; HOLOGRAPHIC INTERFEROMETRY; NICKEL; PHOTOCURRENTS; PLATINUM; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SYNTHESIS (CHEMICAL); THIN FILMS;

ZINC SULFIDE;

EID: 67650232968     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2009.05.026     Document Type: Article

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