Formation of (W,V)Cx layers at the WC/Co interfaces in the VC-doped WC-Co cemented carbide

International Journal of Refractory Metals and Hard Materials

Volumn 30, Issue 1, 2012, Pages 185-187

  Sugiyama, I ^a   Mizumukai, Y ^a   Taniuchi, T ^b   Okada, K ^b   Shirase, F ^b   Tanase, T ^c   Ikuhara, Y ^a,d   Yamamoto, T ^a,d,e  

^a UNIVERSITY OF TOKYO   (Japan)

^b MITSUBISHI MATERIALS CORPORATION   (Japan)

^c Japan New Metals Co Ltd   (Japan)

^d JAPAN FINE CERAMICS CENTER   (Japan)

^e NAGOYA UNIVERSITY   (Japan)

Author keywords

Cemented carbides; Cermets; Hard metals; Transmission electron microscope (TEM); WC Co; X ray energy dispersive spectroscopy (EDS)

Indexed keywords

CEMENTED CARBIDES; HARD METALS; TRANSMISSION ELECTRON MICROSCOPE (TEM); WC-CO; X-RAY ENERGY DISPERSIVE SPECTROSCOPY (EDS);

CARBIDE TOOLS; ENERGY DISPERSIVE SPECTROSCOPY; GRAIN GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIQUIDS; PHASE INTERFACES; SINTERING; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; TUNGSTEN ALLOYS; VANADIUM;

TUNGSTEN CARBIDE;

EID: 80054003599     PISSN: 02634368     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijrmhm.2011.08.006     Document Type: Article

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