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Materials Science Forum

Volumn 700, Issue , 2012, Pages 49-52

Characterization of the structural and electrical properties of ion beam sputtered ZnO films

(4) Murmu, Peter P a,b,c Kennedy, John a,b Ruck, Ben J b,c Markwitz, Andreas a,b

a GNS SCIENCE (New Zealand)

b MACDIARMID INSTITUTE FOR ADVANCED MATERIALS AND NANOTECHNOLOGY (New Zealand)

c VICTORIA UNIVERSITY OF WELLINGTON (New Zealand)

Author keywords

AFM; Carrier concentration; Ion Beam Sputtering; Resistivity; XRD; ZnO

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; II-VI SEMICONDUCTORS; IONS; METALLIC FILMS; NANOTECHNOLOGY; SPUTTERING; SURFACE ROUGHNESS; X RAY DIFFRACTION; ZINC OXIDE;

ANNEALED FILMS; COMPRESSIVE STRAIN; ION-BEAM SPUTTERING; LATTICE PARAMETER VALUES; STRUCTURAL AND ELECTRICAL PROPERTIES; VARYING TEMPERATURE; ZNO FILMS;

ION BEAMS;

EID: 80053954639 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.700.49 Document Type: Conference Paper

Times cited : (10)

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