Strained-layer quantum-well lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 5, 2011, Pages 1364-1373

  Adams, Alfred R ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Quantum well (QW); semiconductor lasers; strain

Indexed keywords

ACTIVE REGIONS; DENSITY OF STATE; NONABSORBING MIRRORS; POPULATION INVERSIONS; QUANTUM WELL;

CRYSTAL SYMMETRY; LASERS; LIGHT AMPLIFIERS; POPULATION STATISTICS; SEMICONDUCTOR QUANTUM WELLS; TENSILE STRAIN;

QUANTUM WELL LASERS;

EID: 80053953035     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2011.2108995     Document Type: Article

References (43)

1. A. R. Adams, "Band structure engineering for low-threshold, high efficiency semiconductor lasers," Electron. Lett., vol. 22, no. 5, pp. 249-50, Feb. 1986.
2. E. Yablonovitch and E. O. Kane, "Reduction of lasing threshold current density by the lowering of valence band effective mass," IEEE J. Lightw. Technol., vol. LT-4, no. 5, pp. 504-506, May 1986. (Pubitemid 16613882)
3. E. P. O'Reilly, G. Jones, A. Ghiti, and A. R. Adams, "Improved performance due to suppression of spontaneous emission in tensile-strain semiconductor lasers," Electron. Lett., vol. 27, no. 16, pp. 1417-1419, Aug. 1991. (Pubitemid 21678949)
4. A. Ghiti, E. P. O'Reilly, and A. R. Adams, "Improved dynamics and linewidth enhancement factor in strained layer lasers," Electron. Lett., vol. 25, pp. 821-822, Jun. 1989.
5. W. D. Laidig, P. J. Caldwell, Y. F. Lin, and C. K. Peng, "Strained-layer quantum-well injection laser," Appl. Phys. Lett., vol. 44, no. 7, pp. 653-655, Apr. 1, 1984.
6. K. J. Beernink, P. K. York, J. J. Coleman, R. G. Waters, J. Kim, and C. M. Wayman, "Characterization of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thickness," Appl. Phys. lett., vol. 55, no. 21, pp. 2167-2169, Nov. 1989.
7. A. Valster, A. T. Meney, J. R. Downes, D. A. Faux, A. R. Adams, A. A. Brouwer, and A. J. Corbijn, "Strain overcompensated GaInP-AIGaInP quantum-well laser structures for improved reliability at high-output powers," IEEE J Sel. top. Quantum Electron., vol. 3, no. 2, pp. 180-187, Apr. 1997. (Pubitemid 127559697)
8. P. J. A. Thijs, L. F. Tiemeijer, and P. I. Kuindersma, "High performance 1.5 μm wavelength InGaAs/InGaAsP strained quantum well lasers and amplifiers," IEEE J. Quantum Electron., vol. 27, no. 6, pp. 1426-1439, Jun. 1991. (Pubitemid 21690661)
9. M. Silver, A. F. Phillips, A. R. Adams, P. D. Greene, and A. J. Collar, "Design and ASE characteristics on 1550-nm polarization-insensitive semiconductor optical amplifiers containing tensile and compressive wells," IEEE J. Quantum Electron., vol. 36, no. 1, pp. 118-122, Jan. 2000. (Pubitemid 30549093)
10. P. J. A. Thijs, J. J. M. Binsma, L. F. Teimeijer, and T. van Dongen, "Improved performance of 1.5 μm wavelength tensile and compressive strained InGaAs/InGaAsP quantum well lasers (invited)," in Proc. ECOC., 1991, pp. 31-38.
11. D. P. Bour, D. P. Gilbert, K. B. Fabian, J. P. Bednarz, and M Ettenberg, "Low degradation rate in strained inGaAs/single quantum well lasers," IEEE photon. Technol. Lett., vol. 2, no. 3, pp. 173-174, Mar. 1990. (Pubitemid 20678564)
12. P. J. A. Thijs, J. J. M. Binsma, L. F. Tiemeijer, P. I. Kuindersma, and T van Dongen, "Low pressure organometallic vapour phase epitaxial and characterization of strained-layer InGaAs-InGaAsP quantum well lasers," J. Microelectron. Eng., vol. 18, pp. 57-74, 1992.
13. J.W. Matthews and A. E. Blakeslee, "Defects in epitaxial multilayers-I," J Cryst. Growth, vol. 27, pp. 118-125, 1974.
14. J. W. Matthews and A. E. Blakeslee, "Defects in epitaxial multilayers-II," J Cryst. Growth, vol. 29, pp. 273-280, 1976.
15. J. W. Matthews and A. E. Blakeslee, "Defects in epitaxial multilayers-III," J Cryst. Growth, vol. 32, pp. 265-273, 1976.
16. J. J. Coleman, "Strained layer quantum well heterostructure lasers," in Quantum Well Lasers, P. S. Zory, Ed. New York: Academic, 1993, Ch. 8, pp. 367-413.
17. P. Blood, "On the dimensionality of optical absorption, gain, and recombination in quantum-confined structures," IEEE J. Quantum Electron., vol. 36, no. 3, pp. 354-362, Mar. 2000. (Pubitemid 30581617)
18. M. G. A. Bernard and G Duraffourg, "Laser Conditions in Semiconductors," Phys. Stat. Sol., vol. 1, pp. 699-703, 1961.
19. E. P. O'Reilly, "Valence band engineering in strained-layer structures," Semicond. Sci. Technol., vol. 4, pp. 121-137, 1989.
20. G. Jones and E. P. O'Reilly, "Improved performance of long-wavelength strained, bulk-like semiconductor lasers," IEEE J. Quantum Electron., vol. 29, no. 5, pp. 1344-1354, May 1993.
21. G. Jones, A. Ghiti, M. Silver, E. P. O'Reilly, and A. R. Adams, "Radiative performance of strained-layer lasers," Proc. Inst. Elect. Eng., vol. 140, no. 1, pp. 85-90, 1993. (Pubitemid 23703500)
22. E. P. O'Reilly and A. R. Adams, "Band-structure engineering in strained semiconductor lasers," IEEE J. Quantum Electron., vol. 30, no. 2, pp. 366-379, Feb. 1994.
23. A. R. Adams, E. P. O'Reilly, and M. Silver, "Strained layer quantum well lasers," in Semiconductor Lasers, E. Kapon, Ed., New York, 1998, pp. 123-176.
24. D. Lancefield, A. R. Adams, A. Meney, W. Knap, E. Litwin-Staszewska, C. Skierbiszewski, and J. L. Robert, "The light-hole mass in a strained InGaAs/GaAs single quantum well and its pressure dependence," J. Phys. Chem. Sol., vol. 56, no. 3/4, pp. 469-473, 1995.
25. A. Valster, C. J. Van Der Poel, C. J. Finke, and M. J. R. Boermans, "Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633 nm," in Proc. 13th IEEE Int. Semicond. Laser conf. Dig., 1992, pp. 152-153.
26. M. J. Hawley, A. R. Adams, E. P. O'Reilly, M. Silver, and A. Valster, "Important loss mechanisms in visible lasers revealed by hydrostatic pressure," Electron. Lett., vol. 28, pp. 1810-1811, 1992.
27. N. F. Masse, A. R. Adams, and S. J. Sweeney, "Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple-quantum well lasers at room temperature," Appl. Phys. Lett., vol. 90, pp. 161113-161115, 2007.
28. A. R. Adams, M. Asada, Y. Suematsu, and S. Arai, "The temperature dependence of the efficiency and threshold current of InGaAsP lasers related to intervalence band absorption," Jpn. J. Appl. Phys., vol. 19, pp. L621-L624, Oct. 1980.
29. G. Belenky, L. Shterengas, and G. Kipshidze, "GaSb-based laser diodes operating within the spectra range of 2-3.5 μm," IEEE J. Sel. Topics Quantum Electron., to be published.
30. K. O'Brien, S. J. Sweeney, A. R. Adams, B. N.Murdin, A. Salhi, Y. Rouillard, and A. Joullie, "Recombination processes in mid-infrared InGaAsSb diode lasers emitting at 2.37 μm," Appl. Phys. Lett., vol. 89, pp. 051104-051106, 2006.
31. C. H. Henry, "Theory of the linewidth of semiconductor lasers," IEEE J. Quantum Electron., vol. QE-18, no. 2, pp. 259-264, Feb. 1982.
32. R. Nagarajan, T. Fukushima, J. E. Bowers, R. Geels, and L. A. Coldren, "High speed InGaAs/GaAs strained MQW lasers with low damping," Appl. Phys. Lett., vol. 58, pp. 2326-2328, 1991.
33. J. E. Bowers, B. R. Hemenway, A. H. Gnauck, and D. P. Wilt, "Highspeed InGaAsP constricted mesa lasers," IEEE J. Quantum Electron., vol. QE-22, no. 6, pp. 833-843, Jun. 1986.
34. J. P. Loehr, Physics of Strained Quantum Well Lasers. Norwell, MA: Kluwer, 1998.
35. M. Silver, P. D. Greene, and A. R. Adams, "Tailoring the heavy-hole and light-hole quantum-confined stark effect using multistrain-stepped quantum wells," Appl. Phys. Lett., vol. 67, no. 20, pp. 2904-2906, 1995.
36. M. Silver, P. D. Greene, and A. R. Adams, "Polarisation-insensitive modulators based on multistrain stepped quantum well structures," Electron. Lett., vol. 30, no. 22, pp. 1890-1891, 1994.
37. T. Fukamachi, K. Adachi, K. Shinoda, T.Kitatani, S. Tanaka,M.Aoki, and S. Tsuji, "Wide temperature range operation of 25-Gb/s 1.3-μmInGaAlAs directly modulated lasers," IEEE J. Sel. Topics Quantum Electron., vol. 17, no. 5, pp. 1138-1145, Sep./Oct. 2011.
38. T. Yamamoto, A. Uetake, K. Otsubo, M. Matsuda, S. Okumura, S. Tomabechi, and M. Ekawa, "1.3-μm AlGaInAs multiple-quantumwell semi-insulating buried-heterostructure distributed-feedback lasers for high-speed direct modulation," IEEE J. Sel. Topics Quantum Electron., vol. 15, no. 3, pp. 687-693, May/Jun. 2009.
39. A. Larsson, "Advances in VCSELs for communication and sensing," IEEE J. Sel. Topics Quantum Electron., vol. 17, no. 6, Nov./Dec. 2011, to be published.
40. P. Westbergh, J. S. Gustavsson, B. Kögel, Å. Haglund, and A. Larsson, "Impact of photon lifetime on high-speed VCSEL performance," IEEE J. Sel. Topics Quantum Electron., vol. 17, no. 6, Nov./Dec. 2011, to be published.
41. M. Müller, W. Hofmann, T. Grundl, M. Horn, P. Wolf, R. D. Nagel, E. Ronnenberg,G.Bohm,D.Bimberg, and M.-C.Amann, "1550-nm highspeed short-cavity VCSELs," IEEE J. Sel. Topics Quantum Electron., vol. 17, no. 5, pp. 1158-1166, Sep./Oct. 2011.
42. S. Imai, K. Takaki, H. Shimizu, Y. Kawakita, T. Takagi, K. Hiraiwa, H. Shimizu, N. Iwai, N. Tsukiji, and A. Kasukawa, "Record low power dissipation of 0.14 mW/Gbps in 1060 nm VCSELs for "green" optical interconnection," IEEE J. Sel. Topics Quantum Electron., vol. 17, no. 6, Nov./Dec. 2011, to be published.
43. R. Poprawe, A. Gillner, and D. Hoffmann, "New ultrafast high power kW class lasers open next generation applications," in Proc. 22nd IEEE Int. Semiconductor Laser Conf. (ISLC), 2010, p. 145.