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Applied Physics Letters

Volumn 99, Issue 14, 2011, Pages

Ultra-fast switching in solution processed quantum dot based non-volatile resistive memory

(2) Kannan, V a Rhee, J K a

a Dongguk University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VALUES; GOOD STABILITY; MEMORY DEVICE; NON-VOLATILE; ON/OFF RATIO; OPERATING MECHANISM; SOLUTION-PROCESSED; SWITCHING CYCLES; SWITCHING SPEED; ULTRA-FAST;

SEMICONDUCTOR QUANTUM DOTS;

EID: 80053945456 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3647629 Document Type: Article

Times cited : (26)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.