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Volumn 84, Issue 11, 2011, Pages

Mechanism behind the switching of current induced by a gate field in a semiconducting nanowire junction

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EID: 80053587382     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.115306     Document Type: Article
Times cited : (11)

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