Stress reduction and electric properties of InSb thin films grown by metalorganic vapor phase epitaxy on sapphire substrates with an InAs buffer layer

Vacuum

Volumn 84, Issue 11, 2010, Pages 1323-1326

  Yamaguchi, Shigeo ^a   Matsumoto, Masashi ^a  

^a KANAGAWA UNIVERSITY   (Japan)

Author keywords

InAs; InSb; MOVPE; Sapphire; Strain; Stress

Indexed keywords

CRYSTALLINE QUALITY; ELECTRICAL PROPERTY; INAS; INSB; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; POWER FACTORS; SAPPHIRE SUBSTRATES; STRESS REDUCTION; THERMOELECTRIC PROPERTIES;

BUFFER LAYERS; ELASTICITY; ELECTRIC POWER FACTOR; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; INDIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING INDIUM; STRAIN; STRUCTURAL DESIGN; THIN FILMS; VAPORS;

INDIUM ANTIMONIDES;

EID: 78049446473     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2010.02.012     Document Type: Article

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