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Journal of Materials Chemistry

Volumn 21, Issue 39, 2011, Pages 15575-15579

Non-volatile transistor memory fabricated using DNA and eliminating influence of mobile ions on electric properties

(5) Yukimoto, Tomoyoshi a Uemura, Sei b Kamata, Toshihide b Nakamura, Kazuki a Kobayashi, Norihisa a

a CHIBA UNIVERSITY (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADVERSE EFFECT; CELL PERFORMANCE; DEOXYRIBONUCLEIC ACIDS; DNA COMPLEX; GATE DIELECTRIC LAYERS; HIGH CRYSTALLINITY; LARGE-GRAIN; LONG TERM MEMORY; LOW RESISTIVITY; MOBILE IONS; NON-VOLATILE; OFF-CURRENT; ON-CURRENTS; ON/OFF RATIO; ORGANIC THIN FILM TRANSISTORS; PENTACENE LAYERS; RESIDUAL ION; WATER MOLECULE;

DNA; ESTERS; EXCITONS; FABRICATION; GATE DIELECTRICS; HOLE MOBILITY; IONIC CONDUCTION; IONS; ORGANIC ACIDS; PHOTOMASKS; SEMICONDUCTING ORGANIC COMPOUNDS; SURFACE ACTIVE AGENTS; TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 80053323469 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c1jm12229k Document Type: Article

Times cited : (31)

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