Memory mechanism of printable ferroelectric TFT memory with tertiary structured polypeptide as a dielectric layer

Synthetic Metals

Volumn 159, Issue 9-10, 2009, Pages 961-964

  Hasegawa, Masatoshi ^a   Kobayashi, Norihisa ^a   Uemura, Sei ^b   Kamata, Toshihide ^b  

^a CHIBA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Biopolymer; Flexible device; Organic memory; Organic transistor; Printable device

Indexed keywords

DIELECTRIC LAYERS; EFFICIENT PROCESS; FERROELECTRIC LAYERS; FILM SURFACES; FLEXIBLE DEVICE; L GLUTAMATES; LARGE-AREA DEVICES; MEMORY DEVICES; MEMORY MECHANISMS; MEMORY PERFORMANCE; NON VOLATILE MEMORY DEVICES; ORGANIC MEMORY; ORGANIC THIN-FILM TRANSISTORS; ORGANIC TRANSISTOR; PRINTABLE DEVICE; TERTIARY STRUCTURES;

BIOMOLECULES; CARRIER TRANSPORT; CHOLESTERIC LIQUID CRYSTALS; CRYSTAL STRUCTURE; FERROELECTRIC MATERIALS; FERROELECTRICITY; HYSTERESIS; LIGHT SOURCES; LIQUID CRYSTALS; MOLECULES; POLYMERS; POLYPEPTIDES; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

DATA STORAGE EQUIPMENT;

EID: 67349119030     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2009.02.013     Document Type: Article

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